Freescale Semiconductor company's ITFET (Inverted T Channel-Field
Effect Transistor) technology make it come true that a single
transistor can be both in the combination of vertical and planar
thin body structure, which overcome a vertical multi-gate
transistors challenges faced in many design and production,
and is expected to open up high performance, low power, small
size of the next-generation semiconductor devices. By combining
the CMOS’ stability and vertical and low leakage current advantages,
the technology end of the vertical planar CMOS and CMOS between
the controversy, so it achieve the comprehensive advantages of the
two in a single device. As in the vertical channel planar areas
mixes silicon, increase the channel width, ITFET vertical planar
areas provide enhanced current capability, which reduces
parasitic resistance and enhancing the mechanical stability of
the vertical channel. Compared with traditional CMOS, the technology
can achieve more gate, greater drive current, which reduces
leakage current than planar thin body and vertical multi-gate
CMOS .CMOS has many advantages, such as: lower leakage current ,
lower parasitic capacitance and higher on-current, etc.The
ITFET technology plan based on the application of 45 nm or above
high-end devices. |